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BUK661R6-30C118

¥6.34
单 FET、MOSFET

N-CHANNEL POWER MOSFET

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs229 nC @ 10 V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds14964 pF @ 25 V
FET Feature-
Power Dissipation (Max)306W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package/ CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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NXP Semiconductors 单 FET、MOSFET 产品 BUK661R6-30C118

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