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HUF75333P3

¥5.90
单 FET、MOSFET

MOSFET N-CH 55V 66A TO220-3

参数名称参数值
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55 V
Current - Continuous Drain (Id) @ 25°C66A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs16mOhm @ 66A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs85 nC @ 20 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1300 pF @ 25 V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package/ CaseTO-220-3

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Harris Corporation 单 FET、MOSFET 产品 HUF75333P3

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