| 参数名称 | 参数值 |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 660mOhm @ 2.1A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 200µA |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 615 pF @ 100 V |
| FET Feature | - |
| Power Dissipation (Max) | 62.5W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO262-3-1 |
| Package/ Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
新闻资讯
Infineon Technologies 单 FET、MOSFET 产品 IPI65R660CFD
作为Infineon Technologies优质且资深的代理服务商，深圳凌创辉电子有限公司在为您采购IPI65R660CFD时，能够保证原装进口的品质保障以外，价格也是业界最优的，找我们买IPI65R660CFD绝对的现货正品，需要报价和咨询请您随时联系我们，同时我们为方便您了解IPI65R660CFD产品详情，我们提供了pdf在线观看参数资料，助您轻松采购。
IPI65R660CFD供应商,IPI65R660CFD现货,IPI65R660CFD代理商,IPI65R660CFDpdf参数资料,买IPI65R660CFD,IPI65R660CFD报价,IPI65R660CFD库存
