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AONS66919

¥11.16
单 FET、MOSFET

N

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C23A (Ta), 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs66 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3420 pF @ 50 V
FET Feature-
Power Dissipation (Max)6.2W (Ta), 113W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-DFN (5x6)
Package/ Case8-PowerSMD, Flat Leads

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Alpha and Omega Semiconductor, Inc. 单 FET、MOSFET 产品 AONS66919

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