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SIR576DP-T1-RE3

¥10.22
单 FET、MOSFET

N-CHANNEL 150 V (D-S) MOSFET POW

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150 V
Current - Continuous Drain (Id) @ 25°C11.1A (Ta), 42.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Rds On (Max) @ Id, Vgs16mOhm @ 10A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs38 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1870 pF @ 75 V
FET Feature-
Power Dissipation (Max)5W (Ta), 71.4W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package/ CasePowerPAK® SO-8

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Vishay/ Siliconix 单 FET、MOSFET 产品 SIR576DP-T1-RE3

作为Vishay/ Siliconix优质且资深的代理服务商,深圳凌创辉电子有限公司在为您采购SIR576DP-T1-RE3时,能够保证原装进口的品质保障以外,价格也是业界最优的,找我们买SIR576DP-T1-RE3绝对的现货正品,需要报价和咨询请您随时联系我们,同时我们为方便您了解SIR576DP-T1-RE3产品详情,我们提供了pdf在线观看参数资料,助您轻松采购。

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