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RJK03M6DNS-00#J5

¥3.60
单 FET、MOSFET

MOSFET N-CH 30V 16A 8HWSON

参数名称参数值
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C16A (Ta)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs9.2mOhm @ 8A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs7.1 nC @ 4.5 V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds1190 pF @ 10 V
FET Feature-
Power Dissipation (Max)12.5W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-HWSON (3.3x3.3)
Package/ Case8-PowerWDFN

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