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RM8N700LD

¥3.38
单 FET、MOSFET
Rectron USA

MOSFET N-CHANNEL 700V 8A TO252-2

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)700 V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs600mOhm @ 4A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds590 pF @ 50 V
FET Feature-
Power Dissipation (Max)69W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252-2
Package/ CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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Rectron USA 单 FET、MOSFET 产品 RM8N700LD

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