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RFD20N03

¥2.95
单 FET、MOSFET

N-CHANNEL POWER MOSFET

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs25mOhm @ 20A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs75 nC @ 20 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1150 pF @ 25 V
FET Feature-
Power Dissipation (Max)90W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package/ CaseTO-251-3 Short Leads, IPak, TO-251AA

新闻资讯

Harris Corporation 单 FET、MOSFET 产品 RFD20N03

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