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SQS482EN-T1_BE3

¥6.55
单 FET、MOSFET

N-CHANNEL 30-V (D-S) 175C MOSFET

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs8.5mOhm @ 16.4A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs39 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1865 pF @ 25 V
FET Feature-
Power Dissipation (Max)62W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package/ CasePowerPAK® 1212-8

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Vishay/ Siliconix 单 FET、MOSFET 产品 SQS482EN-T1_BE3

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