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FDD8896

¥3.10
单 FET、MOSFET

POWER FIELD-EFFECT TRANSISTOR, 1

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C17A (Ta), 94A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5.7mOhm @ 35A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2525 pF @ 15 V
FET Feature-
Power Dissipation (Max)80W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252, (D-Pak)
Package/ CaseTO-252-3, DPak (2 Leads + Tab), SC-63

新闻资讯

Fairchild Semiconductor 单 FET、MOSFET 产品 FDD8896

作为Fairchild Semiconductor优质且资深的代理服务商,深圳凌创辉电子有限公司在为您采购FDD8896时,能够保证原装进口的品质保障以外,价格也是业界最优的,找我们买FDD8896绝对的现货正品,需要报价和咨询请您随时联系我们,同时我们为方便您了解FDD8896产品详情,我们提供了pdf在线观看参数资料,助您轻松采购。

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