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FDS8878

¥1.58
单 FET、MOSFET

POWER FIELD-EFFECT TRANSISTOR, 1

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C10.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs14mOhm @ 10.2A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs26 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds897 pF @ 15 V
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOIC
Package/ Case8-SOIC (0.154", 3.90mm Width)

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Fairchild Semiconductor 单 FET、MOSFET 产品 FDS8878

作为Fairchild Semiconductor优质且资深的代理服务商,深圳凌创辉电子有限公司在为您采购FDS8878时,能够保证原装进口的品质保障以外,价格也是业界最优的,找我们买FDS8878绝对的现货正品,需要报价和咨询请您随时联系我们,同时我们为方便您了解FDS8878产品详情,我们提供了pdf在线观看参数资料,助您轻松采购。

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