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CPH6355-TL-H

¥1.01
单 FET、MOSFET
onsemi

POWER FIELD-EFFECT TRANSISTOR, P

参数名称参数值
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs169mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs3.9 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds172 pF @ 10 V
FET Feature-
Power Dissipation (Max)1.6W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-CPH
Package/ CaseSOT-23-6

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onsemi 单 FET、MOSFET 产品 CPH6355-TL-H

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