| 参数名称 | 参数值 |
|---|---|
| Product Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 16 V |
| Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4V |
| Rds On (Max) @ Id, Vgs | 12Ohm @ 10mA, 4V |
| Vgs(th) (Max) @ Id | 1.1V @ 10µA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Vgs (Max) | ±7V |
| Input Capacitance (Ciss) (Max) @ Vds | 10 pF @ 3 V |
| FET Feature | - |
| Power Dissipation (Max) | 150mW (Ta) |
| Operating Temperature | 150°C |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-MMPAK |
| Package/ Case | 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) |
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Renesas Electronics Corporation 单 FET、MOSFET 产品 2SK1958-T1-A
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