欢迎您来到深圳凌创辉电子有限公司!
0755-83216080

TSM60NB190CM2 RNG

¥31.47
单 FET、MOSFET

MOSFET N-CH 600V 18A TO263

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs190mOhm @ 6A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs31 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1273 pF @ 100 V
FET Feature-
Power Dissipation (Max)150.6W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263 (D²Pak)
Package/ CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

新闻资讯

Taiwan Semiconductor 单 FET、MOSFET 产品 TSM60NB190CM2 RNG

作为Taiwan Semiconductor优质且资深的代理服务商,深圳凌创辉电子有限公司在为您采购TSM60NB190CM2 RNG时,能够保证原装进口的品质保障以外,价格也是业界最优的,找我们买TSM60NB190CM2 RNG绝对的现货正品,需要报价和咨询请您随时联系我们,同时我们为方便您了解TSM60NB190CM2 RNG产品详情,我们提供了pdf在线观看参数资料,助您轻松采购。

TSM60NB190CM2 RNG供应商,TSM60NB190CM2 RNG现货,TSM60NB190CM2 RNG代理商,TSM60NB190CM2 RNGpdf参数资料,买TSM60NB190CM2 RNG,TSM60NB190CM2 RNG报价,TSM60NB190CM2 RNG库存

3003677450

微信二维码

扫码微信咨询

0755-83216080