参数名称 | 参数值 |
---|---|
Product Status | Obsolete |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30 V |
Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 5V |
Rds On (Max) @ Id, Vgs | 25mOhm @ 25A, 5V |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 5 V |
Vgs (Max) | ±15V |
Input Capacitance (Ciss) (Max) @ Vds | 4900 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 125W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D²PAK |
Package/ Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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onsemi 单 FET、MOSFET 产品 MTB50P03HDLT4G
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