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TSM650N15CS RLG

¥17.58
单 FET、MOSFET

MOSFET N-CHANNEL 150V 9A 8SOP

参数名称参数值
Product StatusNot For New Designs
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150 V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs65mOhm @ 4A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs37 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1783 pF @ 75 V
FET Feature-
Power Dissipation (Max)12.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOP
Package/ Case8-SOIC (0.154", 3.90mm Width)

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Taiwan Semiconductor 单 FET、MOSFET 产品 TSM650N15CS RLG

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