参数名称 | 参数值 |
---|---|
Product Status | Not For New Designs |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200 V |
Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
Rds On (Max) @ Id, Vgs | 280mOhm @ 4.5A, 10V |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 5 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1080 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 55W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-252AA |
Package/ Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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onsemi 单 FET、MOSFET 产品 FQD12N20LTM-F085
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