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TSM4NB65CI

¥8.65
单 FET、MOSFET

650V, 4A, SINGLE N-CHANNEL POWER

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.37Ohm @ 2A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs13.46 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds549 pF @ 25 V
FET Feature-
Power Dissipation (Max)25W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageITO-220
Package/ CaseTO-220-3 Full Pack, Isolated Tab

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Taiwan Semiconductor 单 FET、MOSFET 产品 TSM4NB65CI

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