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TSM085P03CV

¥6.23
单 FET、MOSFET

-30, -64, SINGLE P-CHANNEL

参数名称参数值
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C14A (Ta), 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs8.5mOhm @ 14A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs55 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3234 pF @ 15 V
FET Feature-
Power Dissipation (Max)2.4W (Ta), 50W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-PDFN (3.1x3.1)
Package/ Case8-PowerWDFN

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Taiwan Semiconductor 单 FET、MOSFET 产品 TSM085P03CV

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