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TSM680P06CH

¥6.22
单 FET、MOSFET

-60V, -18A, SINGLE P-CHANNEL POW

参数名称参数值
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs68mOhm @ 6A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs16.4 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds870 pF @ 30 V
FET Feature-
Power Dissipation (Max)20W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-251S (I-PAK SL)
Package/ CaseTO-251-3 Stub Leads, IPak

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Taiwan Semiconductor 单 FET、MOSFET 产品 TSM680P06CH

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