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IAUC120N06S5L022ATMA1

¥5.36
单 FET、MOSFET

MOSFET_)40V 60V)

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C170A (Tj)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2.2mOhm @ 60A, 10V
Vgs(th) (Max) @ Id2.2V @ 65µA
Gate Charge (Qg) (Max) @ Vgs77 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5651 pF @ 30 V
FET Feature-
Power Dissipation (Max)136W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-34
Package/ Case8-PowerTDFN

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Infineon Technologies 单 FET、MOSFET 产品 IAUC120N06S5L022ATMA1

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