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TSM080N03EPQ56

¥4.81
单 FET、MOSFET

30V, 55A, SINGLE N-CHANNEL POWER

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs8mOhm @ 16A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs7.5 nC @ 4.5 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds750 pF @ 25 V
FET Feature-
Power Dissipation (Max)54W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-PDFN (5x5.8)
Package/ Case8-PowerTDFN

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Taiwan Semiconductor 单 FET、MOSFET 产品 TSM080N03EPQ56

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