参数名称 | 参数值 |
---|---|
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60 V |
Current - Continuous Drain (Id) @ 25°C | 115mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
Rds On (Max) @ Id, Vgs | 7.5Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | - |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 200mW (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-236 |
Package/ Case | TO-236-3, SC-59, SOT-23-3 |
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Vishay/ Siliconix 单 FET、MOSFET 产品 2N7002-T1-E3
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