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PJQ5425_R2_00001

¥3.56
单 FET、MOSFET
PANJIT

30V P-CHANNEL ENHANCEMENT MODE M

参数名称参数值
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C15.8A (Ta), 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs107 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6067 pF @ 25 V
FET Feature-
Power Dissipation (Max)2W (Ta), 60W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDFN5060-8
Package/ Case8-PowerVDFN

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PANJIT 单 FET、MOSFET 产品 PJQ5425_R2_00001

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