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G075N06MI

¥10.58
单 FET、MOSFET

N60V, 110A,RD<7M@10V,VTH1.0V~4.0

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs90 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6443 pF @ 30 V
FET Feature-
Power Dissipation (Max)160W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263
Package/ CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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Goford Semiconductor 单 FET、MOSFET 产品 G075N06MI

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