参数名称 | 参数值 |
---|---|
Product Status | Obsolete |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30 V |
Current - Continuous Drain (Id) @ 25°C | 1.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 140mOhm @ 1.5A, 10V |
Vgs(th) (Max) @ Id | 2V @ 6.3µA |
Gate Charge (Qg) (Max) @ Vgs | 2.9 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 294 pF @ 15 V |
FET Feature | - |
Power Dissipation (Max) | 500mW (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-SOT363-6 |
Package/ Case | 6-VSSOP, SC-88, SOT-363 |
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Infineon Technologies 单 FET、MOSFET 产品 BSD314SPEH6327XTSA1
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