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BSO051N03MSGXUMA1

¥2.16
单 FET、MOSFET

SMALL SIGNAL FIELD-EFFECT TRANSI

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C14A
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs5.1mOhm @ 18A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3200 pF @ 15 V
FET Feature-
Power Dissipation (Max)2.5W
Operating Temperature-55°C ~ 150°C
Mounting TypeSurface Mount
Supplier Device PackagePG-DSO-8
Package/ Case8-SOIC (0.154", 3.90mm Width)

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Infineon Technologies 单 FET、MOSFET 产品 BSO051N03MSGXUMA1

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