参数名称 | 参数值 |
---|---|
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60 V |
Current - Continuous Drain (Id) @ 25°C | 80A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 7.7mOhm @ 80A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 30 V |
FET Feature | - |
Power Dissipation (Max) | 96W (Ta) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | LPTL |
Package/ Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ROHM Semiconductor 单 FET、MOSFET 产品 RJ1L08CGNTLL
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