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FQPF5N50CYDTU

¥10.80
单 FET、MOSFET
onsemi

MOSFET N-CH 500V 5A TO220F-3

参数名称参数值
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500 V
Current - Continuous Drain (Id) @ 25°C5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.4Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs24 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds625 pF @ 25 V
FET Feature-
Power Dissipation (Max)38W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220F-3 (Y-Forming)
Package/ CaseTO-220-3 Full Pack, Formed Leads

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onsemi 单 FET、MOSFET 产品 FQPF5N50CYDTU

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