| 参数名称 | 参数值 |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 720mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 850mOhm @ 720mA, 10V |
| Vgs(th) (Max) @ Id | 2.6V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 0.92 nC @ 10 V |
| Vgs (Max) | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds | 28 pF @ 30 V |
| FET Feature | - |
| Power Dissipation (Max) | 420mW (Ta), 4.2W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount, Wettable Flank |
| Supplier Device Package | DFN1110D-3 |
| Package/ Case | 3-XDFN Exposed Pad |
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