TK190E65Z,S1X
￥20.02
650V DTMOS VI TO-220 190MOHM
| 参数名称 | 参数值 |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 7.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 610µA |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1370 pF @ 300 V |
| FET Feature | - |
| Power Dissipation (Max) | 130W (Tc) |
| Operating Temperature | 150°C |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220 |
| Package/ Case | TO-220-3 |
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Toshiba Electronic Devices and Storage Corporation 单 FET、MOSFET 产品 TK190E65Z,S1X
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