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IRFU120ATU

¥7.20
单 FET、MOSFET

MOSFET N-CH 100V 8.4A IPAK

参数名称参数值
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C8.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs200mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs22 nC @ 10 V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds480 pF @ 25 V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 32W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package/ CaseTO-251-3 Short Leads, IPak, TO-251AA

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Fairchild Semiconductor 单 FET、MOSFET 产品 IRFU120ATU

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