参数名称 | 参数值 |
---|---|
Product Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 15 V |
Current - Continuous Drain (Id) @ 25°C | 1.6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 10V |
Rds On (Max) @ Id, Vgs | 180mOhm @ 1.5A, 10V |
Vgs(th) (Max) @ Id | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 5.45 nC @ 10 V |
Vgs (Max) | +2V, -15V |
Input Capacitance (Ciss) (Max) @ Vds | - |
FET Feature | - |
Power Dissipation (Max) | 791mW (Ta) |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SOIC |
Package/ Case | 8-SOIC (0.154", 3.90mm Width) |
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Texas Instruments 单 FET、MOSFET 产品 TPS1100D
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