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TK40A10N1,S4X

¥13.32
单 FET、MOSFET

MOSFET N-CH 100V 40A TO220SIS

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs8.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs49 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3000 pF @ 50 V
FET Feature-
Power Dissipation (Max)35W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220SIS
Package/ CaseTO-220-3 Full Pack

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Toshiba Electronic Devices and Storage Corporation 单 FET、MOSFET 产品 TK40A10N1,S4X

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