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IPT111N20NFDATMA1

¥70.20
单 FET、MOSFET

MOSFET N-CH 200V 96A 8HSOF

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C96A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs11.1mOhm @ 96A, 10V
Vgs(th) (Max) @ Id4V @ 267µA
Gate Charge (Qg) (Max) @ Vgs87 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7000 pF @ 100 V
FET Feature-
Power Dissipation (Max)375W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-HSOF-8-1
Package/ Case8-PowerSFN

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Infineon Technologies 单 FET、MOSFET 产品 IPT111N20NFDATMA1

作为Infineon Technologies优质且资深的代理服务商,深圳凌创辉电子有限公司在为您采购IPT111N20NFDATMA1时,能够保证原装进口的品质保障以外,价格也是业界最优的,找我们买IPT111N20NFDATMA1绝对的现货正品,需要报价和咨询请您随时联系我们,同时我们为方便您了解IPT111N20NFDATMA1产品详情,我们提供了pdf在线观看参数资料,助您轻松采购。

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