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IPTC054N15NM5ATMA1

¥48.67
单 FET、MOSFET

OPTIMOS 5 POWER MOSFET

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150 V
Current - Continuous Drain (Id) @ 25°C17.5A (Ta), 143A (Tc)
Drive Voltage (Max Rds On, Min Rds On)8V, 10V
Rds On (Max) @ Id, Vgs5.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id4.6V @ 191µA
Gate Charge (Qg) (Max) @ Vgs73 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5700 pF @ 75 V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 250W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-HDSOP-16-2
Package/ Case16-PowerSOP Module

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Infineon Technologies 单 FET、MOSFET 产品 IPTC054N15NM5ATMA1

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