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IAUA200N04S5N010AUMA1

¥21.46
单 FET、MOSFET

MOSFET N-CH 40V 200A 5HSOF

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40 V
Current - Continuous Drain (Id) @ 25°C200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)7V, 10V
Rds On (Max) @ Id, Vgs1mOhm @ 100A, 10V
Vgs(th) (Max) @ Id3.4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs132 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7650 pF @ 25 V
FET Feature-
Power Dissipation (Max)167W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-HSOF-5-1
Package/ Case5-PowerSFN

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Infineon Technologies 单 FET、MOSFET 产品 IAUA200N04S5N010AUMA1

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