参数名称 | 参数值 |
---|---|
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20 V |
Current - Continuous Drain (Id) @ 25°C | 5A |
Drive Voltage (Max Rds On, Min Rds On) | - |
Rds On (Max) @ Id, Vgs | 18mOhm @ 4.2A, 10V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 4.5 V |
Vgs (Max) | ±12V |
Input Capacitance (Ciss) (Max) @ Vds | 780 pF @ 10 V |
FET Feature | - |
Power Dissipation (Max) | 1.25W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-23 |
Package/ Case | TO-236-3, SC-59, SOT-23-3 |
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Goford Semiconductor 单 FET、MOSFET 产品 G2312
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