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GSJD6505

¥6.19
单 FET、MOSFET

MOSFET, N-CH, SINGLE, 5A, 650V,

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs900mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds370 pF @ 50 V
FET Feature-
Power Dissipation (Max)46W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252 (DPAK)
Package/ CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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Good Ark Semiconductor 单 FET、MOSFET 产品 GSJD6505

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