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G7P03L

¥3.67
单 FET、MOSFET

P30V,RD(MAX)<23M@-10V,RD(MAX)<34

参数名称参数值
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs23mOhm @ 3A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs29 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1500 pF @ 15 V
FET Feature-
Power Dissipation (Max)1.9W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3
Package/ CaseTO-236-3, SC-59, SOT-23-3

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Goford Semiconductor 单 FET、MOSFET 产品 G7P03L

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