| 参数名称 | 参数值 |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 65A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Rds On (Max) @ Id, Vgs | 69mOhm @ 40A, 20V |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 122 nC @ 20 V |
| Vgs (Max) | +25V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 318W (Tc) |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | HiP247™ |
| Package/ Case | TO-247-3 |
新闻资讯
STMicroelectronics 单 FET、MOSFET 产品 SCT50N120
作为STMicroelectronics优质且资深的代理服务商，深圳凌创辉电子有限公司在为您采购SCT50N120时，能够保证原装进口的品质保障以外，价格也是业界最优的，找我们买SCT50N120绝对的现货正品，需要报价和咨询请您随时联系我们，同时我们为方便您了解SCT50N120产品详情，我们提供了pdf在线观看参数资料，助您轻松采购。
SCT50N120供应商,SCT50N120现货,SCT50N120代理商,SCT50N120pdf参数资料,买SCT50N120,SCT50N120报价,SCT50N120库存
