TPW5200FNH,L1Q
￥21.67
PB-F POWER MOSFET TRANSISTOR DSO
| 参数名称 | 参数值 |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 250 V |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 13A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 100 V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta), 142W (Tc) |
| Operating Temperature | 150°C |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-DSOP Advance |
| Package/ Case | 8-PowerWDFN |
新闻资讯
Toshiba Electronic Devices and Storage Corporation 单 FET、MOSFET 产品 TPW5200FNH,L1Q
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