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SIHD14N60ET1-GE3

¥16.56
单 FET、MOSFET

N-CHANNEL 600V

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs309mOhm @ 7A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs64 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1205 pF @ 100 V
FET Feature-
Power Dissipation (Max)147W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package/ CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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Vishay/ Siliconix 单 FET、MOSFET 产品 SIHD14N60ET1-GE3

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