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FDD86367-F085

¥14.83
单 FET、MOSFET
onsemi

MOSFET N-CH 80V 100A DPAK

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80 V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs88 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4840 pF @ 40 V
FET Feature-
Power Dissipation (Max)227W (Tj)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252AA
Package/ CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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onsemi 单 FET、MOSFET 产品 FDD86367-F085

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