TK11P65W,RQ
￥14.54
MOSFET N-CH 650V 11.1A DPAK
| 参数名称 | 参数值 |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 11.1A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 440mOhm @ 5.5A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 450µA |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 890 pF @ 300 V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DPAK |
| Package/ Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
新闻资讯
Toshiba Electronic Devices and Storage Corporation 单 FET、MOSFET 产品 TK11P65W,RQ
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