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SIRA01DP-T1-GE3

¥9.07
单 FET、MOSFET

MOSFET P-CH 30V 26A/60A PPAK SO8

参数名称参数值
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C26A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs112 nC @ 10 V
Vgs (Max)+16V, -20V
Input Capacitance (Ciss) (Max) @ Vds3490 pF @ 15 V
FET Feature-
Power Dissipation (Max)5W (Ta), 62.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package/ CasePowerPAK® SO-8

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Vishay/ Siliconix 单 FET、MOSFET 产品 SIRA01DP-T1-GE3

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