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SI7308DN-T1-GE3

¥8.50
单 FET、MOSFET

MOSFET N-CH 60V 6A PPAK1212-8

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs58mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds665 pF @ 15 V
FET Feature-
Power Dissipation (Max)3.2W (Ta), 19.8W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package/ CasePowerPAK® 1212-8

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Vishay/ Siliconix 单 FET、MOSFET 产品 SI7308DN-T1-GE3

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