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RD3L080SNTL1

¥8.06
单 FET、MOSFET

MOSFET N-CH 60V 8A TO252

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs80mOhm @ 8A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs9.4 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds380 pF @ 10 V
FET Feature-
Power Dissipation (Max)15W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252
Package/ CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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ROHM Semiconductor 单 FET、MOSFET 产品 RD3L080SNTL1

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