TPH2R903PL,L1Q
￥6.84
PB-FPOWERMOSFETTRANSISTORSOP8-AD
| 参数名称 | 参数值 |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 2.9mOhm @ 35A, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 200µA |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2300 pF @ 15 V |
| FET Feature | - |
| Power Dissipation (Max) | 960mW (Ta), 81W (Tc) |
| Operating Temperature | 175°C |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOP Advance (5x5) |
| Package/ Case | 8-PowerVDFN |
新闻资讯
Toshiba Electronic Devices and Storage Corporation 单 FET、MOSFET 产品 TPH2R903PL,L1Q
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