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R6000ENHTB1

¥6.48
单 FET、MOSFET

600V 0.5A, SOP8, LOW-NOISE POWER

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs8.8Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs4.3 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds45 pF @ 25 V
FET Feature-
Power Dissipation (Max)2W (Ta)
Operating Temperature150°C
Mounting TypeSurface Mount
Supplier Device Package8-SOP
Package/ Case8-SOIC (0.154", 3.90mm Width)

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